产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 150 MHz, 2.1 W, 6 A, 440 hFE
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)
NEXPERIA
双极晶体管阵列, 双NPN, 30 V, 1.3 W, 500 mA, 4000 hFE, SOT-89
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 300 hFE
(EN)
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 510 mW, 2 A, 50 hFE, SOT-1118
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, 30 V, 100 MHz, 900 mW, 3 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 42 mohm, 10 V, 5 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 32 V, 250 mW, 100 mA, 150 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.8 A, -100 V, 600 mohm, -10 V, -4 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, PNP, -30 V, 160 MHz, 390 mW, -2.4 A, 320 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 500 mW, 1 A, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 420 mW, 1 A, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0225 ohm, 10 V, 600 mV
(EN)NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 420 mW, 1 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)
