产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 100 MHz, 310 mW, -800 mA, 170 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 100 MHz, 250 mW, 100 mA, 520 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 52 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 引脚
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 500 mW, -1 A, 63 hFE
(EN)
NEXPERIA
双极晶体管阵列, NPN, PNP, -50 V, 420 mW, -500 mA, 50 hFE, SOT-457
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
(EN)
DIODES INC.
单晶体管 双极, 通用, NPN, 60 V, 175 MHz, 1 W, 2 A, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 4 V
(EN)
ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 14 A, -100 V, 200 mohm, -10 V, -4 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm
(EN)
DIODES INC.
单晶体管 双极, PNP, -60 V, 200 MHz, 300 mW, -600 mA, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)
