产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, PNP, -160 V, 120 MHz, 15 W, -1.5 A, 80 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
ROHM
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 500 mA, 50 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0032 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 0.12 ohm, -10 V, -5 V
(EN)
NXP
晶体管 双极-射频, NPN, 15 V, 9 GHz, 300 mW, 70 mA, 120 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 38 A, 80 V, 29 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -30 V, 0.094 ohm, -10 V, -1.87 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 40 V, 0.0063 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V
(EN)
