产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
NEXPERIA
双极晶体管阵列, 通用, NPN, 40 V, 200 mW, 100 mA, 120 hFE, SOT-666
(EN)
STMICROELECTRONICS
三端双向可控硅, 800 V, 50 mA, 1 W, 1.3 V, TO-220AB, 250 A
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -50A, TO-252-5
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 引脚
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 100 MHz, 200 mW, 100 mA, 420 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0051 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 200 mA, 40 hFE, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 40 V, 350 mW, 1.2 A, 10000 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 1 W, 1 A, 5000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 300 V, 15 W, 500 mA, 30 hFE
(EN)
