产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
(EN)
NEXPERIA
单晶体管 双极, PNP, 100 V, 300 mW, 1 A, 150 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 91 A, 55 V, 0.0058 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 3.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
DIODES INC.
双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 2 W, 10 A, 100 hFE
(EN)
