ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
NEXPERIA
单晶体管 双极, PNP, 20 V, 140 MHz, 500 mW, 1 A, 85 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 350 mW, 100 mA, 20 hFE
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0027 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -8 A, 140 hFE
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 5 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 180 MHz, 20 W, 5 A, 200 hFE
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 40 mohm, 10 V, 2 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 10 kohm, 47 kohm
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 3 MHz, 36 W, 4 A, 15 hFE
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V
NEXPERIA
双极晶体管阵列, NPN, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43.5 A, 100 V, 0.03 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, P沟道, 75 mA, -100 V, 20 ohm, -10 V, -3.5 V
NEXPERIA
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 0.016 ohm, 4.5 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 0.2 ohm, 10 V, 4 V