INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
NEXPERIA
双极晶体管阵列, 双PNP, -30 V, 250 mW, -500 mA, 4000 hFE, SOT-23
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 13.5 mohm, 10 V, 3 V
NEXPERIA
单晶体管 双极, PNP, -40 V, 97 MHz, 1.3 W, -10 A, 40 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 250 MHz, 200 mW, 100 mA, 30 hFE
NEXPERIA
单晶体管 双极, NPN, 30 V, 250 MHz, 250 mW, 600 mA, 100 hFE
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.015 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0035 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 60 V, 0.01 ohm, 10 V, 3 V
DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 2 W, 300 mA, 100 hFE
INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.04 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -420 mA, -150 V, 2.05 ohm, -6 V, -4.5 V
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -400 V, 7 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 250 mW, 200 mA, 100 hFE