产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
双极晶体管阵列, NPN, 45 V, 600 mW, 500 mA, 160 hFE, SOT-457
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -500 V, 500 mW, -500 mA, 10 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.7 A, 12 V, 0.036 ohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0037 ohm, -10 V, -1.5 V
(EN)DIODES INC.
单晶体管 双极, NPN, 65 V, 300 MHz, 300 mW, 100 mA, 180 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 20 V, 140 MHz, 600 mW, 5.3 A, 570 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 110 MHz, 600 mW, 4.6 A, 470 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 350 V, 20 W, 500 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0075 ohm, 10 V, 5 V
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 30 V, 50 mohm, 16 V, 1.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 80 V, 150 MHz, 1 W, 500 mA, 100 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 4.7 kohm
(EN)
