产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
(EN)
ROHM
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 40 V, 400 MHz, 1 W, 1.5 A, 60 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.1 A, -80 V, 0.148 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 500 mW, -1 A, 100 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
(EN)NEXPERIA
单晶体管 双极, PNP, 40 V, 250 mW, 1 A, 300 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 20 V, 180 MHz, 625 mW, -1.5 A, 475 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm
(EN)
