产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 20 V, 100 MHz, 1 W, 1 A, 250 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 200 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 45 V, 100 MHz, 280 mW, 100 mA, 110 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 68 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, -100 V, 80 W, 12 A, 100 hFE
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.028 ohm, -4.5 V, -300 mV
(EN)
