产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 225 mA, 100 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 250 V, 10 MHz, 15 W, 1 A, 10 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 500 mW, 1 A, 150 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 115 MHz, 2.1 W, -2.7 A, 295 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 4 V
(EN)DIODES INC.
单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -2 A, 150 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -400 V, 625 mW, -300 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
晶体管, JFET, -25 V, 20 mA, 40 mA, -1.8 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 500 mW, -1 A, 40 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
