产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.003 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)ROHM
单晶体管 双极, NPN, 80 V, 280 MHz, 10 W, 2 A, 120 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 65 MHz, 1.68 W, 2 A, 40 hFE
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00103 ohm, 10 V, 1.73 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 1.35 W, 2 A, 900 hFE
(EN)
DIODES INC.
双极晶体管阵列, 双路补偿高增益, NPN, PNP, 40 V, 2.75 W, 2 A, 500 hFE, SOT-223
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
(EN)DIODES INC.
单晶体管 双极, NPN, 180 V, 70 MHz, 2 W, 500 mA, 500 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 1.65 W, -1 A, 63 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 50 mA, 1 W, 1.5 V, TO-220AB, 210 A
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 150 V, 95 mohm, 10 V, 5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV
(EN)
