产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.58 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 120 MHz, 500 mW, 1.5 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 0.0052 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 150 MHz, 500 mW, -3 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 50 V, 100 MHz, 200 mW, 150 mA, 390 hFE
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 135 mA, 350 V, 35 ohm, 0 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, -7 mA, -60 mA, 6 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 107 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, 25 V, 2 mA, 9 mA, -7 V, SOT-23, 开关
(EN)
