产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 300 V, 60 MHz, 500 mW, 50 mA, 50 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)
RENESAS
晶体管, MOSFET, N沟道, 40 A, 60 V, 4.5 mohm, 10 V
(EN)ROHM
双极晶体管阵列, AEC-Q101, 双NPN, 50 V, 150 mW, 150 mA, 120 hFE, SC-88
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, PNP, -30 V, 125 MHz, 350 mW, -1.2 A, 10000 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 160 V, 300 mW, 600 mA, 80 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 400 MHz, 3.5 W, -4 A, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -35 V, 20 mA, -10 V, SOT-23, JFET
(EN)
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.046 电阻比率
(EN)NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)
