产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 13.5 A, 30 V, 0.0052 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -80 V, 20 W, -8 A, 40 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 80 V, 150 MHz, 1 W, 1 A, 5000 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 2 A, 6 W, 1 GHz, SOT-89
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11.1 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 12 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.042 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12.5 A, 80 V, 13.5 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
(EN)DIODES INC.
单晶体管 双极, PNP, -400 V, 50 MHz, 1 W, -200 mA, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 250 MHz, 250 mW, 100 mA, 180 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 380 MHz, 3.5 W, -3 A, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 120 MHz, 1.3 W, 700 mA, 200 hFE
(EN)
