产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 293 A, 60 V, 1.5 mohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 135 A, 55 V, 4.7 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.00505 ohm, 10 V, 1.68 V
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0115 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 63 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
(EN)LITTELFUSE
单晶体管, IGBT, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 60 V, 65 W, 5 A, 1000 hFE
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 100 V, 500 mA, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 120 MHz, 200 mW, -800 mA, 160 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0023 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
(EN)
