产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 40 V, 128 MHz, 1.3 W, 10 A, 230 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)NEXPERIA
单晶体管 双极, NPN, 100 V, 140 MHz, 25 W, 2 A, 10 hFE
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 双路 PNP, -50 V, -100 mA, 10 kohm, 47 kohm
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -250 V, 60 MHz, 250 mW, -50 mA, 50 hFE
(EN)MICROCHIP
功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -100 V, 200 MHz, 625 mW, -1 A, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 32 V, 250 mW, 100 mA, 600 hFE
(EN)
