产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 双PNP, -30 V, 125 MHz, 2 W, -1 A, 120 hFE
(EN)
BROADCOM LIMITED
二极管, 射频/PIN, 开关, 单, 0.6 ohm, 50 V, SOT-23, 3引脚, 0.8 pF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8.83 A, -60 V, 0.23 ohm, -6.2 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 80 V, 16.5 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -100 V, 90 MHz, 1.5 W, -10 A, 10 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 1.75 W, -6 A, 15 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 154 mA, 30 V, 1.4 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, PNP, -120 V, 160 MHz, 1 W, -1 A, 3000 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V
(EN)
