产品分类：半导体 - 分立器件,品牌：DIODES INC.,规格：MSL MSL 1 -无限制,
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 8.6 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 10 A, 30 V, 0.0134 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
(EN)DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
(EN)DIODES INC.
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
(EN)DIODES INC.
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)
DIODES INC.
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 16 A, 30 V, 0.005 ohm, 10 V, 1.3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 16 A, 30 V, 0.005 ohm, 10 V, 1.3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.04 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)
