产品分类：半导体 - 分立器件,品牌：FUJI ELECTRIC,规格：MSL -,
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
单晶体管, IGBT, 28 A, 1.85 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
单晶体管, IGBT, 53 A, 1.8 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 31 A, 1.8 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 32 A, 300 V, 130 mohm, 10 V, 5 V
(EN)FUJI ELECTRIC
单晶体管, IGBT, 48 A, 1.85 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 55 A, 1.6 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 64 A, 1.5 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 70 A, 1.8 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 63 A, 1.85 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 85 A, 1.6 V, 360 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
(EN)
