产品分类：半导体 - 分立器件,规格：电压 @ Rds测量 15V,
RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V, 4 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 11.5 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.009 ohm, 15 V, 4 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 23 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0025 ohm, 15 V, 4 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V
(EN)RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 100 V, 11 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)
