产品分类：半导体 - 分立器件,规格：电流, Id 连续 5.7A,
NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 5.7A, TRENCHFET-4
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.83 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道, 5.7A, 20V, MicroFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.028 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 35 mohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 35 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
