产品分类：半导体 - 分立器件,规格：针脚数 3引脚,
MULTICOMP
单管二极管 齐纳, BZX84C系列, 5.6 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 68.8 A, 100 V, 0.0065 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 10 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)DIODES INC.
肖特基整流器, 单, 40 V, SOT-23, 3 引脚, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 50 V, 0.03 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.028 ohm, -4.5 V, -1 V
(EN)DIODES INC.
单管二极管 齐纳, 3.6 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 50 W, 10 A, 60 hFE
(EN)
MULTICOMP
肖特基二极管, 20A, 100V, ITO-220AB
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12.5 A, 700 V, 0.3 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)NEXPERIA
单晶体管 双极, NPN, 300 V, 50 MHz, 250 mW, 100 mA, 25 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -12 V, 500 MHz, 225 mW, -200 mA, 20 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 14 mohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V
(EN)
