产品分类：半导体 - 分立器件,规格：针脚数 3引脚,
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 70 V, 160 MHz, 2 W, 2 A, 300 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)
ROHM
单晶体管 双极, PNP, -30 V, 320 MHz, 500 mW, -1 A, 270 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅开关
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0015 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 45 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
(EN)
NEXPERIA
小信号肖特基二极管, 双共阳极, 70 V, 70 mA, 1 V, 100 mA, 150 °C
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.55 ohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -45 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 600 V, 0.063 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 40 W, 10 A, 100 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 350 mW, 500 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 240 A, 3.6 V, 30 W, 430 V, TO-220F, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
(EN)MULTICOMP
小信号肖特基二极管, 双系列, 70 V, 200 mA, 700 mV, 100 mA, 125 °C
(EN)
