ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 引脚
MULTICOMP
肖特基整流器, 双共阴极, 60 V, 10 A, TO-220AB, 3 引脚, 900 mV
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 250 A
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 130 mohm, 10 V, 4 V
INFINEON
单晶体管, IGBT, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 引脚
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 125 W, 10 A, 500 hFE
NTE ELECTRONICS
射频双极性晶体管
TOSHIBA
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.3 ohm, 10 V, 4 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 100 A
INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0036 ohm, 10 V, 2.8 V
ROHM
肖特基整流器, 100 V, 10 A, 双共阴极, TO-252, 3 引脚, 870 mV
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 4.7 A, 900 V, 2.5 ohm, 10 V, 4 V
INFINEON
单晶体管, IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 引脚
TAIWAN SEMICONDUCTOR
肖特基整流器, 45 V, 15 A, 双共阴极, TO-220AB, 3 引脚, 840 mV
STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 30 W, 1 A, 75 hFE
STMICROELECTRONICS
晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250
NEXPERIA
单晶体管 双极, PNP, -30 V, 100 MHz, 250 mW, -100 mA, 220 hFE
ON SEMICONDUCTOR
晶体管, NPN
MULTICOMP
双极晶体管
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 110 hFE
NEXPERIA
单管二极管 齐纳, 11 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
NEXPERIA
单管二极管 齐纳, 4.3 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V