INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 40 MHz, 60 W, 4 A, 40 hFE
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, HFE 40
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 1 W, 800 mA, 10000 hFE
ON SEMICONDUCTOR
Schottky Rectifier, 45 V, 30 A, Dual Common Cathode, TO-220, 3 Pins, 730 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道, 25W, D-PAK
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
VISHAY
晶闸管, 1200 V, 150 mA, 35 A, 55 A, TO-247AC, 3 引脚
NEXPERIA
单晶体管 双极, PNP, 20 V, 300 mW, 2 A, 225 hFE
VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 270 mohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
LITTELFUSE
可控硅, 8A
STMICROELECTRONICS
小信号肖特基二极管, 单, 100 V, 30 A, 870 mV, 530 A, 150 °C
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
NEXPERIA
二极管 小信号, 单, 100 V, 215 mA, 1.25 V, 4 ns, 4 A
ROHM
单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE
ROHM
单晶体管 双极, PNP, -12 V, 400 MHz, 200 mW, -1.5 A, 270 hFE
ROHM
单晶体管 双极, NPN, 18 V, 1.5 GHz, 200 mW, 20 mA, 56 hFE
ROHM
单晶体管 双极, NPN, 11 V, 3.2 GHz, 200 mW, 50 mA, 56 hFE