VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
PANASONIC ELECTRONIC COMPONENTS
肖特基整流器, 双共阴极, 30 V, 130 mA, SOT-23, 3 引脚, 550 mV
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
ROHM
二极管 小信号, 双系列, 100 V, 1.25 V, 3 μs, 4 A
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30 hFE
STMICROELECTRONICS
小信号肖特基二极管, 单, 60 V, 30 A, 615 mV, 600 A, 150 °C
INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, RD-91, 400 A
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚
VISHAY
场效应管, MOSFET, N沟道
ON SEMICONDUCTOR
肖特基整流器, 80 V, 20 A, 双共阴极, TO-220, 3 引脚, 950 mV
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 200 W, 16 A, 75 hFE
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
NEXPERIA
单管二极管 齐纳, 15 V, 250 mW, SOT-23, 2 %, 3 引脚, 150 °C
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
VISHAY
晶闸管, 1600 V, 60 mA, 20 A, 30 A, TO-247AC, 3 引脚
NEXPERIA
二极管 小信号, 单, 110 V, 250 mA, 1.25 V, 50 ns, 10 A
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V