产品分类：半导体 - 分立器件,规格：针脚数 3引脚,
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
LITTELFUSE
可控硅晶闸管, 400V, 25A, TO220
(EN)STMICROELECTRONICS
三端双向可控硅, 无缓冲器, 1.2 kV, 50 mA, 1 W, 1.3 V, TO-220AB
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.003 ohm, 10 V, 3.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 230 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -60 V, 65 W, 5 A, 1000 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 63 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 A, 75 V, 0.00146 ohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 1.75 W, -8 A, 100 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)
VISHAY
单管二极管 齐纳, 12 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
ON SEMICONDUCTOR
晶闸管, SCR, 12A, 50V, TO-220AB
(EN)
NTE ELECTRONICS
单晶体管 双极, NPN, 80 V, 400 MHz, 800 mW, 1 A, 300 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 65 W, 6 A, 15 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.245 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
(EN)
LITTELFUSE
晶闸管, 800 V, 15 mA, 5.1 A, 8 A, TO-220AB, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -45 V, 200 MHz, 330 mW, -1 A, 250 hFE
(EN)
