产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.022ohm,
INFINEON
晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.022 ohm, 10 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.022 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
(EN)
