产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.39ohm,
NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.39 ohm, 10 V, 5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.39 ohm, 10 V, 5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
