产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 700mohm,
TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 20 V, 700 mohm, 4 V, 300 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 500mA, SC-89
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
(EN)
