产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 1.8V,
INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0137 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, POWERTRENCH, 30V, 30A, POWER56, 整卷
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 112 A, 40 V, 0.0022 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 25A, PQFN-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 30 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0072 ohm, 10 V, 1.8 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 100A, PQFN-8
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 11A, SOIC
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 19 A, 20 V, 0.0022 ohm, 4.5 V, 1.8 V
(EN)VISHAY
场效应管, MOSFET, 双N沟道, 30V, SOIC
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.5A, SOIC-8, 整卷
(EN)
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
