产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 600mV,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.2 A, 20 V, 25 mohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6.4 A, 12 V, 0.021 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 660 mA, 20 V, 320 mohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.028 ohm, 4.5 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.1 ohm, 4.5 V, 600 mV
(EN)
VISHAY
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 25 V, 7.1 mohm, 10 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V 13.5A 8-SOIC
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 7.2 A, 20 V, 11.5 mohm, 10 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 7.2 A, 20 V, 11.5 mohm, 10 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 9.5A
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.087 ohm, 10 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.013 ohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0235 ohm, 4.5 V, 600 mV
(EN)
