产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 3V,
VISHAY
场效应管, MOSFET, N通道, 30V, 40A, SOIC, 整卷
(EN)VISHAY
场效应管, MOSFET, N通道, 25V, 30A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0048 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 30V, 35A POWERPAK, 整卷
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 0.68 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
