产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 3V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 140 A, 200 V, 0.01 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3.3 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2400 μohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.225 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
