产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0032 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 100 V, 0.085 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 6.2 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 500 V, 0.47 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 560 V, 0.5 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.4 A, 600 V, 0.68 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 120 V, 0.0098 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 57.7 A, 600 V, 0.067 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)
