PANASONIC ELECTRONIC COMPONENTS
快速/超快二极管, 单, 200 V, 1 A, 980 mV, 35 ns, 15 A
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 400 MHz, 700 mW, 1 A, 300 hFE
ON SEMICONDUCTOR
单管二极管 齐纳, 75 V, 3 W, DO-41 (DO-204AL), 5 %, 2 引脚, 200 °C
NXP
二极管, 射频/PIN, 单, 0.7 ohm, 175 V, SOD-323, 2引脚, 0.35 pF
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 25 V, 0.0038 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 450 MHz, 600 mW, -1 A, 300 hFE
ON SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 3 W, DO-41 (DO-204AL), 5 %, 2 引脚, 200 °C
ON SEMICONDUCTOR
齐纳二极管, 3W, 82V, SMB
ON SEMICONDUCTOR
肖特基整流器, 50 V, 100 mA, 单, SOT-23, 3 引脚, 550 mV
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 3W, 9.1V, DO-214AC
INFINEON
晶体管, MOSFET, N沟道, 93 A, 20 V, 0.0045 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 单路NPN, 50 V, 100 mA, 2.2 kohm, 4.7 kohm, 0.47 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 330 MHz, 300 mW, 700 mA, 300 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
TAIWAN SEMICONDUCTOR
标准恢复二极管, 400 V, 1 A, 单, 1 V, 30 A
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 8 V, 13 GHz, 400 mW, 150 mA, 60 hFE
VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 22 GHz, 230 mW, 70 mA, 90 hFE
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 2.5 V
INFINEON
小信号肖特基二极管, 双系列, 8 V, 130 mA, 500 mV, 150 °C
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 4 V
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 520 MHz, 700 mW, -700 mA, 200 hFE