产品分类：半导体 - 分立器件,规格：汽车质量标准 -,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
二极管 小信号, 单, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)
STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 6 A, 18 nC, TO-252
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 20 V, 3 A, 单, DO-214AB, 2 引脚, 500 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 200 MHz, 1.15 W, 600 mA, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
STMICROELECTRONICS
肖特基整流器, 200 V, 2 A, 单, DO-214AA, 2 引脚, 800 mV
(EN)
ROHM
单管二极管 齐纳, 外延平面, 6.2 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 110 hFE, SOT-143
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 30 V, 0.048 ohm, 4.5 V, 800 mV
(EN)
INFINEON
二极管, 碳化硅肖特基, thinQ Series, 单, 1.2 kV, 14 A, 14 nC, TO-252
(EN)ON SEMICONDUCTOR
肖特基整流器, 100 V, 5 A, 单, TO-252, 3 引脚, 710 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 33 W, 3 A, 80 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0043 ohm, 11.5 V, 2.5 V
(EN)
