VISHAY
小信号肖特基二极管, 双系列, 40 V, 200 mA, 1 V, 600 mA, 125 °C
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V
ON SEMICONDUCTOR
肖特基整流二极管, 1mA 20V SOT-323
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V
NXP
二极管, 射频/PIN, 单, 1.4 ohm, 50 V, SOD-523, 2引脚, 0.25 pF
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 800 V, 3 A, 单, 1.7 V, 75 ns, 125 A
TAIWAN SEMICONDUCTOR
标准恢复二极管, 100 V, 3 A, 单, 1.1 V, 125 A
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
VISHAY
齐纳二极管, VZ:5.6V
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
VISHAY
场效应管, MOSFET, NP通道, 40V, 10/-9.2A, SOIC-8
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
VISHAY
场效应管, P通道, MOSFET
INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 15 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
VISHAY
快速/超快二极管, 100 V, 1 A, 单, 1.1 V, 15 ns, 30 A
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V