产品分类：半导体 - 分立器件,规格：漏源电压, Vds 1.2kV,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.28 ohm, 20 V, 2.8 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 60 A, 1.2 kV, 0.04 ohm, 20 V, 2.6 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)
IXYS RF
晶体管, 射频FET, 1.2 kV, 8 A, 880 W, DE-375
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
GENESIC SEMICONDUCTOR
合成包, 碳化硅结晶体管/肖特基二极管, 1.2KV, TO-263
(EN)
IXYS RF
晶体管, 射频FET, 1.2 kV, 8 A, 250 W, ISOPLUS247
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 32 A, 1.2 kV, 350 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-263
(EN)
WOLFSPEED
单晶体管 双极, 6件, N沟道, 87 A, 1.2 kV, 0.025 ohm, 20 V, 2.3 V
(EN)
GENESIC SEMICONDUCTOR
场效应管, JFET/SIC二极管合成包, 1.2KV, SOT-227
(EN)
