产品分类：半导体 - 分立器件,规格：漏源电压, Vds 200V,
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0106 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.8 A, 200 V, 180 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, TO-220
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 200 V, 25 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 200V, PowerPAK SO
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 200 V, 0.054 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
