产品分类：半导体 - 分立器件,规格：漏源电压, Vds 200V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 30A, TO-204AE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
MOSFET, N CHANNEL, 200V, 0.0625OHM, 3.7A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.047 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 5A, D-PAKS
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 200 V, 380 mohm, 10 V, 5.5 V
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 24 A, 200 V, 63.7 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 200 V, 45 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
RENESAS
晶体管, MOSFET, N沟道, 400 mA, 200 V, 5 ohm, 10 V
(EN)
VISHAY
晶体管, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 4A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 200V, 25A, SOIC, 整卷
(EN)
