产品分类：晶体管,规格：晶体管封装类型 TO-220FP,
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 150 V, 80 mohm, 10 V, 4.9 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 3 MHz, 2 W, 3 A, 10 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 19.3 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.1 A, 500 V, 0.45 ohm, 13 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0078 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 150 V, 30 MHz, 2 W, 8 A, 30 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 44 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
