VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
VISHAY
Transistor Polarity:P Channel
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
NEXPERIA
单晶体管 双极, NPN, 60 V, 140 MHz, 1.5 W, 10 A, 50 hFE
ON SEMICONDUCTOR
射频双极晶体管
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 25 hFE
VISHAY
场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 35 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 1.5 W, -600 mA, 50 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -3 V
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道+肖特基, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 1.5 W, -600 mA, 200 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, 1.5 A, 25 hFE
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE