产品分类：晶体管,规格：功耗 Pd 85W,
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 55 V, 32 mohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 100 V, 4 MHz, 85 W, 15 A, 1000 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.8 A, -500 V, 3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 85 W, 15 A, 1000 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -400 V, 2.44 ohm, -10 V, -5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 90 V, 85 W, 20 A
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 80 V, 4 MHz, 85 W, 15 A, 1000 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-220AB, 3 引脚
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 190 V, 0.13 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 30 A, 2.7 V, 85 W, 600 V, Module
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.7 A, -500 V, 4.9 ohm, -10 V, -5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
