产品分类：晶体管,规格：功耗 Pd 250W,
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, 250 V, 250 W, 60 A, 75 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)MULTICOMP
单晶体管 双极, 通用, NPN, 140 V, 2 MHz, 250 W, 20 A, 25 hFE
(EN)MULTICOMP
单晶体管 双极, 通用, PNP, 140 V, 2 MHz, 250 W, 20 A, 25 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 150 mohm, -10 V, -5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 96 A, 100 V, 0.008 ohm, 20 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 650V, 24A, TO-263-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.22 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0023 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0024 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.31 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -250 V, 4 MHz, 250 W, -16 A, 60 hFE
(EN)SOLID STATE
单晶体管 双极, 达林顿, NPN, 500 V, 250 W, 50 A, 10 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)MULTICOMP
单晶体管 双极, 通用, PNP, -200 V, 4 MHz, 250 W, -16 A, 15 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 0.12 ohm, -10 V, -5 V
(EN)
