产品分类：晶体管,规格：功耗 Pd 220W,
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45 A, 150 V, 34 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 40V, 190A, TO-220AB
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-247, 3 Pins
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.28 ohm, 10 V, 5 V
(EN)
NXP
晶体管, 射频FET, 125 V, 16 A, 220 W, 1 MHz, 108 MHz
(EN)
