产品分类：晶体管,规格：功耗 Pd 310W,
INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 5.3 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 7.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 310 W, 1.35 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 20 A, 1.7 V, 310 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 44 A, 300 V, 38 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 80A, TO-263AB, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 100 A, 2.4 V, 310 W, 600 V, Module
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
(EN)
