产品分类：晶体管,规格：功耗 Pd 39W,
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0137 ohm, 10 V, 3.6 V
(EN)
TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.23 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.0059 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 6.6A D-PAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 12 A, 2.2 V, 39 W, 600 V, TO-220FP, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 35A TO-252AA
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.4A, IPAK
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
(EN)VISHAY
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V
(EN)
