INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V
NXP
晶体管 双极-射频, NPN, 15 V, 9 GHz, 500 mW, 120 mA, 120 hFE
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0063 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 70 mohm, -10 V, -4 V
NXP
晶体管 双极-射频, NPN, 12 V, 6 GHz, 300 mW, 35 mA, 90 hFE
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 0.004Ω, 145A, TO-252-3
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
VISHAY
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.0083 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
单晶体管, IGBT, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 引脚
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB